Abstract
An electron-transport theory is presented for an isotype semiconductor heterojunction diode with energy-band and effective-mass discontinuities. During an interface electron transfer, the electron total energy and transverse momentum are assumed to be conserved. After the quantum-mechanical transmission coefficient is determined with a tight-binding connection of the electron wave functions, the boundary conditions for the momentum distribution function are obtained, assuming a conservation of electron flux. These conditions are applied to quasi-Fermi energy formulation in an approximate way. Numerical examples in an AlxGa1-xAs/GaAs junction indicate that due considerations concerning interface electron-transfer effects are necessary for the design and simulation of longitudinal-type heterojunction devices.
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