Abstract
The potential profiles of symmetric and asymmetric rectangular double-barrier structures made of (Ga, Al)As/GaAs and the transmission coefficient of an electron in these systems have been investigated under intense laser field. The results show that the field alters the potential profile, and the transmission coefficient can thus be controlled. The transmission at the first resonance energy for the symmetric structure is higher than that of the asymmetric structure. Therefore, the symmetric design is feasible. The properties exhibited in this work may establish guidance to device applications.
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