Abstract
The electron transfer processes in thin-film diode structures of Ta–Ta2O5–Au have been studied. The structures were prepared by electron beam evaporation of tantalum at 10−6 Torr followed by plasma oxidation of the tantalum film to the desired thickness. The counterelectrode metal was then evaporated without breaking the vacuum. Current—voltage—temperature characteristics of these structures were studied. Tunnel emission was observed when the tantalum electrode was biased positively and Schottky emission was observed for the tantalum electrode biased negatively. Trapezoidal energy barrier models have been used by many authors to explain electron injection and transfer through extremely thin insulating films. Such a model is proposed here for the tantalum—tantalum-oxide system, and as is shown, it provides a self-consistent framework for describing both Schottky and tunnel emission electron transfer processes in these structures. Using this model, it was found that the barrier height at the parent tantalum oxide interface is 1.1 eV and the built-in voltage with a gold counterelectrode is 0.5 eV.
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