Electron subband population and mobility in asymmetric coupled quantum wells

Abstract

The electron subband energy and population engineering by inserting a thin AlGaAs barrier inside a GaAs quantum well (QW) is considered. The specific voltage across the coupled QW's which arises due to the asymmetric deformation of electron wave function is calculated. The simplified analytical model for confined and interface polar optical phonons in the double barrier GaAs QW with inserted AlGaAs barrier is described. The electron-polar optical phonon scattering rates, the electron mobility and the photoexcited electron subband population as functions of the position of the AlGaAs barrier in the asymmetric coupled QW's are considered.