Abstract
The electron subband structure in a thin (100) silicon film is analyzed based on a two-band k⋅p theory. For unprimed subbands the dependence of the nonparabolicity parameter on film thickness is obtained. The two-band k⋅p theory gives a thickness dependence of the effective masses for primed subbands. Limitations of the model are discussed. The importance of the nonparabolicity parameter dependence on the film thickness for transport is demonstrated.
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