Abstract
Auger Electron spectroscopy was used to study electron-stimulated oxidation (ESO) of SiC. The rate of oxidation was investigated as a function of electron-beam exposure (on and off), primary electron-beam energy (3–6keV), electron-beam current (25–500nA) and total chamber pressure. The oxidation rate correlated with overall chamber pressure rather than the partial pressure of H2O, CO or CO2 alone. The rate decreased as the primary-beam voltage Ep was increased. The oxidation rate increased as the primary-beam current was increased at higher pressures (2.2×10−7Torr). Oxidation did not occur in the absence of the electron beam.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
