Abstract
Electron-stimulated desorption of positive ions from a LiF layer adsorbed on Si(100) is measured in the electron energy range 30–300eV. The relative ion yields change rapidly near the F2s and Li1s ionization thresholds. Emission of SiF+x ions (where x=1, 2, 3) is observed from LiF deposited at 100K. Emission of these fluorosilyls almost completely disappears after annealing at nearly 500K and is replaced by emission of SiLiF3 species. We suggest that for the low temperature growth, SiFx components are build in the area between LiF grains. Data presented indicate that adsorbate islands and uncovered Si(100) substrate channels can be obtained by LiF deposition above 500K or by annealing an LiF/Si system above this temperature. The presence of F2+ ions and their kinetic energy distribution dependence on the sample preparation temperature is also discussed.
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