Abstract

The subband structure of the narrow-gap semiconductor Hg1−xCdxTe is investigated theoretically at finite temperature by a modified sixbandk·p model based on the effective-mass approximation. A study of the complete surface energy spectrum is reported. The mobile, bound and resonant states are treated by considering energy states in a large quantum box. The theory is applied to cases with strong interband interaction when the resonant character of the subband states is prominent.

Full Text
Paper version not known

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call