Abstract

AbstractWith the aim of understanding the observed roomtemperature giant magnetic moment of highly diluted GaGdN reported in literature GaGdN, GaGdN:Si and GaGdN:H have been grown by molecular beam epitaxy (MBE) and the Gd concentration is between 1016 and 1021 cm3. All samples are ferromagnetic at 300 K as measured by SQUID and the very high saturation magnetic moment in this type of samples is confirmed by our experiments.With co‐doping of hydrogen or silicon we were able to decrease or increase the strength of the magnetic moments in the layers, respectively. All our findings indicate that ferromagnetism is stabilized by electrons. Electrical measurements on GaGdN layers grown on highly resistive 6H‐SiC (0001) show a typical temperature dependence of hopping conductivity. The resistivity of the material is 0,1 to 13 kΩ cm in the temperature range from 60 to 10 K. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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