Abstract
ABSTRACTThe technique of spin dependent recombination (SDR) allows the electron spin resonance (ESR) observation of electrically-active point defects in a single metal-oxide-semiconductor field-effect transistor (MOSFET) with surface areas of only 10-4 cm2 and Si/Si02 interface point defect densities of ∼1011/cm2. With SDR's enhanced sensitivity, devices with different processing details are explored. Differences in the E' spectra for variations in the oxidation processing are discussed.
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