Abstract
Electron spin resonance of donor electrons has been investigated in phosphorus-doped silicon at 46GHz and in the temperature range from 1.5 K to 4.2 K. From the temperature variation of the resonance line due to the donor clusters, that consist of more than several donor atoms, it is concluded that the exchange coupling between donor atoms within the cluster is antiferromagneric. The analysis of the peak shift of the central line indicates that there exists a weak ferromagnetic exchange coupling between the donor clusters. One of the striking result in our experiment is that two resonance lines separated by 0.8 Oe from each other at 1.5 K are observed at the donor concentration of 1.74×10 18 cm -3 which belongs to the intermediate concentration region, that is the transition region from the non-metallic to metallic type of impurity conduction. Both resonance lines are interpreted as being due to two types of the donor clusters which may correspond to the non-metallic and the metallic region in the crystal.
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