Abstract
AbstractElectron spin resonance of As donors in Ge has been investigated in the impurity concentration range 1.5 × 1015 to 2 × 1019 cm−3 at temperatures from 1.7 to 4.2 °K. Impurity conduction in the same samples has been studied for NAs ≦ 2 × 1017 cm−3. It is shown that the line‐narrowing in the concentration range 2 × 1017 cm−3 ≧ NAs ≧ 4 × 1016 cm−3 with H0 ∥ [100] orientation cannot be due to the electron motion over impurity centres. Exchange‐narrowing due to the formation of clusters has been discussed. The reduction of angular dependence of the linewidth ΔH with increasing temperature is ascribed to transitions into excited states, by which contributions from different valleys to g‐factor are averaged. For highly doped samples the rate of intervalley transitions has been estimated from the data on angular dependence of ΔH.
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