Abstract
Electron-spin dynamics in semiconductor-based heterostructures has been investigated in oblique magnetic fields. Spins are generated optically by a circularly polarized light, and the dynamics of spins in dependence of the orientation (θ) of the magnetic field are studied. The electron-spin precession frequency, polarization amplitude, and decay rate as a function ofθare obtained and the reasons for their dependences are discussed. From the measured data, the values of the longitudinal and transverse components of the electrong-factor are estimated and are found to be in good agreement with those obtained in earlier investigations. The possible mechanisms responsible for the observed effects are also discussed.
Highlights
Spintronics [1,2,3] has been built on the spin degree of freedom and discusses the idea of using information carriedM
In the previous study [8], we focused on spin dynamics in a transverse magnetic field in GaAs QWs by circularly polarized photoluminescence (PL) measurements
The PL was measured in the right (r?) and left (r-) circularly polarizations under r? light excitation in the presence of external bias and magnetic field, and Pr was calculated from the measured data
Summary
Spintronics [1,2,3] has been built on the spin degree of freedom and discusses the idea of using information carriedM. The spin generation by the optical methods has been successful and the high spin-polarization of conductor band electrons in semiconductor heterostructures has been obtained [2]. In the previous study [8], we focused on spin dynamics in a transverse magnetic field in GaAs QWs by circularly polarized photoluminescence (PL) measurements.
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