Abstract
We performed electrically detected ESR measurements on a high‐mobility Si/SiGe heterostructure sample. The negative change in the longitudinal resistivity observed in a specific Landau level configuration demonstrates that the ESR signal is caused by the reduction of the spin polarization. The longitudinal spin relaxation time T1 was found to be of the order of 1 ms in the in‐plane magnetic field of 3.55 T. The very long T1 is qualitatively explained by the suppression of the effect of the Rashba fields due to high frequency spin precession.
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