Abstract
Investigations of the properties of the metal-semiconductor (M-S) interfaces formed at low temperatures are of special importance due to the drastic reduction of many processes involved in the interface formation. In the present report we present latest results obtained for interfaces of this metal films with n- and p-type InAs(110) at two different substrate temperatures, 10 K (LT) and 300 K (RT). The measurements were done by ultraviolet photoelectron spectroscopy (UPS), low electron energy loss spectroscopy (LEELS), Auger electron spectroscopy (AES) and low energy electron diffraction (LEED). The investigations show that the interfaces between metals and InAs(110) present a variety of peculiar phenomena. This makes the systems markedly different from those with other A3B5 substrates. Very distinctive results are obtained at LT.
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