Electron Spectroscopy of CdMeTe Nanostructures Created on CdTe Surface Under Ion Bombardment

Ergashov Yokub,Umirzakov Boltakhodja,A Drozdov

doi:10.1051/e3sconf/202017801079

Ergashov Yokub, Umirzakov Boltakhodja + Show 1 more

Open Access

https://doi.org/10.1051/e3sconf/202017801079

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Abstract

The electronic structure of CdMeTe nanostructures was studied by a variety of techniques of secondary and photoelectron spectroscopy. Particularly, for the first time it has been shown that in the conductivity band of the CdZnTe films there are maximums peaks of free electronic states with energies 3.5 and 4.4 eV relative Ev.

Highlights

Multi-layer thin-film structures based on semiconductor compounds A2B6 are widely used to design diverse optoelectronic devices, including solar cells
This paper reports the energy band parameters and the results of the studyof the density of electronic states in the valence band and in the conductivity band for three-component nanofilms of Cd1-xMexTe produced by Ba and Zn ion implantation into CdTe
The investigation was carried out in vacuum (10-6 bar) by Auger-electron spectroscopy (AES), ultraviolet photoelectron spectroscopy (UPS), electron energy loss spectroscopy (EELS) and by measurements of energy dependencies of the coefficients of secondary electron emission (SEE) and intensities of light transmitting through the sample

Summary

Introduction

Multi-layer thin-film structures based on semiconductor compounds A2B6 are widely used to design diverse optoelectronic devices, including solar cells. In recent years a techniques of lowenergy ion implantation is frequently used for nano-sized structures on the surface and in near-surface region of semiconductor and dielectric films [7,8,9,10]. The films of Cd0.5Ba0.5Te were produced by the Ba+ ion implantation into CdTe in combination with annealing [10]. It was established that the state densities of valence electrons and the forbidden band width of the CdBaTe nanofilms for d≤25-30 Å depend on film thickness. This paper reports the energy band parameters and the results of the studyof the density of electronic states in the valence band and in the conductivity band for three-component nanofilms of Cd1-xMexTe produced by Ba and Zn ion implantation into CdTe

Experimental methods

Results and discussion

Conclusion