Abstract
The ionization energy of an electron bound to a donor atom is calculated as a function of the number of electrons in the conduction band and the temperature assuming Thomas-Fermi screening. The results are compared with a previous numerical calculation performed for InSb. We also show that it is possible to induce a Mott transition by applying stress to a degenerately doped many-valley semiconductor, with a resulting change from a metallic to an insulating phase.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
