Abstract
We study theoretically the effect of the in-plane magnetic field on two-dimensional electron gas transport in GaAs/InGaAs single quantum well structure. Our results show that, due to the scatterers (GaSb quantum dots) are one-side distributed, the in-plane magnetic field leads to an anisotropic scattering probability, which results in a higher mobility along the direction perpendicular to the magnetic field. Besides, compared with the no magnetic field case, the mobility shows a parabolic increasing trend as the in-plane magnetic field strength increases.
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