Abstract
A superlattice composed of materials exhibiting spontaneous electrical polarization has strong electric fields in both wells and barriers. Electrons in the wells are confined in deep triangular potentials whereas polar-optical phonons are confined in square wells. The electron–phonon interaction therefore presents novel features, and these are explored here in the system Al1−xInxN/GaN assumed to be lattice-matched. The dielectric-continuum model is used to calculate bulk alloy and interface mode properties, and threshold scattering rates are estimated. The reduced role of phonon symmetry is pointed out.
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