Abstract
Applying the single-site approximation to the s–f model, the electrical resistivity in a degenerate ferromagnetic semiconductor is studied theoretically. It is revealed that in the weak exchange-interaction limit, the resistivity of the up-spin electron agrees with that obtained by the Born approximation, while the resistivity of the down-spin electron retains a finite value even at T=0, which is due to the spin-flip scattering process. The density of states and electrical resistivity for the strong exchange-interaction limit are also calculated. It is emphasized that the results of electrical resistivity normalized by that of the high-temperature limit show a similar temperature and magnetic field dependence over a broad range of exchange-interaction strengths.
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