Abstract
GaInP/GaAs/GaInP double heterojunction bipolar transistors have been fabricated for the study of electron saturation velocity (vsat) in GaInP. The necessary composite design at the base–collector junction, which effectively reduces the conduction band spike and avoids the premature Kirk effect, enables us to use the Kirk effect to study vsat. The deduced electron saturation velocity in GaInP is ∼5×106 cm/sec.
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