Abstract
Incorporation of an electron reflector is a proposed strategy to improve V oc for CdTe solar cells by reducing electron contact with the back surface. An electron reflector is a conduction band barrier, which can be formed by a back layer with an expanded band gap, a reversed back barrier, or a heavily doped back surface. These approaches to electron reflectors in CdTe solar cells are investigated with numerical simulations. The expanded band gap is shown to be the more efficient and practical way to create a CdTe electron reflector. For optimal improvement with an electron reflector, reasonable lifetime (1 ns or above) and full depletion are required. Without full depletion, bulk recombination limits the improvement. Theoretically, a 200 mV increase in voltage and 3% in efficiency are achievable for a 2-micron CdTe cell with 1013-cm−3 hole density, 1-ns lifetime, and a 0.2-eV electron reflector barrier.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
