Abstract
The Raman scattering related with conduction band states in semiconductor pyramidal quantum dots is theoretically investigated. The electron Raman differential cross section and Raman gain coefficient are calculated making use of analytically determined quantum states. The energy spectrum is obtained within the effective mass approximation. The features of the Raman differential cross section are discussed in terms of their dependence on the changes of the quantum dot geometry. The variation of the Raman gain coefficient as a function of the quantum dot size and shape is also analyzed.
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