Electron radiation impact on the kink effect in S 22 of InP-based high electron mobility transistors

Abstract

In this paper, the effect of 1 MeV electron radiation on the kink effect in S 22 of InP-based high electron mobility transistors (HEMTs) has been comprehensively analyzed. The radiated fluence is varied among 1 × 1014 cm−2, 1 × 1015 cm−2 and 1 × 1016 cm−2. The size change of the kink effect before and after radiation is expressed by self-normalization and standard deviation. The results show that the kink effect appears at 36 GHz and becomes distinct in the sub-threshold region. The non-monotonous trend of the S 22 curve caused by the kink effect increases as the fluence increases. The dual-feedback circuit methodology is adopted to explain the influence of electron radiation on the kink effect; moreover, the change of transconductance and gate capacitance is the main reason for the influence of electron radiation on the kink effect in S 22. This research will provide theoretical guidance for InP-based HEMTs to be used in space radiation applications.