Abstract
The $\frac{1}{f}$ resistance noise of thin Bi films of lateral dimensions 1-10 \ensuremath{\mu}m increases at low temperatures approximately as ${T}^{\ensuremath{-}1}$, and the noise at 1 K is larger than at room temperature. The noise magnitude is reduced by a factor of 2 above a temperature-dependent characteristic magnetic field. These phenomena demonstrate that below liquid-nitrogen temperature the $\frac{1}{f}$ noise in a weakly disordered metal arises from defect-mediated quantum interference of conduction electrons.
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