Abstract
Rare earth doped GaN structures offer potential for optical devices emitting in the visible spectral region. Doping with europium and erbium produces characteristic sharp red and green emission lines respectively, due to intra-4f(n) shell electron transitions. We describe studies of Eu- and Er- ion implanted MOCVD grown GaN epilayers on sapphire using an electron probe micro-analyser modified to allow cathodoluminescence (CL) spectroscopy. Wavelength dispersive X-ray analysis is shown to be an accurate technique for quantifying rare earth concentrations in GaN, down to similar to0.06 atomic % and is complemented by CL acquired at the same time from the same microscopic region of sample.
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