Abstract

It is shown theoretically that the strong coupling of electrons in a bulk gapless semiconductor (HgTe) to a circularly polarized high-frequency electromagnetic field induces topological states on the surface of the semiconductor. Their branches lie near the center of the Brillouin zone and have the Dirac dispersion. Thus, the light-induced topological phase transition in the semiconductor appears. The structure of the found surface states is studied both analytically and numerically in the broad range of their parameters.

Highlights

  • The achievements in the laser and microwave techniques have made possible the optical control of condensed matter structures with a high-frequency electromagnetic field, which is based on the Floquet theory of periodically driven quantum systems (Floquet engineering)

  • We present the theory of optically induced topological electronic states on the surface of bulk gapless semiconductor

  • 3α/4γ2 − ∆/4γ2, where γ2 is the Luttinger parameter of the semiconductor band structure, α is the band parameter corresponding to the Hamiltonian terms linear in k, and ∆ = 2γ2(eE/ ̄hω)2 is the field-induced gap between the conduction and valence bands in the Brillouin zone center

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Summary

Introduction

The achievements in the laser and microwave techniques have made possible the optical control of condensed matter structures with a high-frequency electromagnetic field, which is based on the Floquet theory of periodically driven quantum systems (Floquet engineering). It is shown theoretically that the strong coupling of electrons in a bulk gapless semiconductor (HgTe) to a circularly polarized high-frequency electromagnetic field induces topological states on the surface of the semiconductor. Among numerous low-dimensional electronic systems, electrons localized near boundaries of condensed matter structures (surface electronic states) bear a special role.

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