Abstract
We have studied electron heating in a 2DEG in GaAs/AlGaAs heterojunctions below 0.5 K. The electron temperature was raised above the lattice temperature using Joule heating. Weak localization and the temperature-dependent sample resistance were used as thermometers for the electrons. The electron-phonon energy relaxation rate was found to be proportional to T 3. We find that the relaxation rate increases with disorder in the system.
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