Abstract
The rate of interband electron transitions assisted by LO-phonon emission is studied in an InAs/GaSb double quantum well heterostructure, which models the active region of a type-II intersubband cascade laser. The main peak of the electron-phonon resonance corresponds to electron transitions from the lowest electron-like subband to the top of the highest light-hole-like subband that is displaced from the center of the Brillouin zone due to the asymmetry of the InAs/GaSb double quantum well heterostructure.
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