Abstract
We have studied theoretically the scattering of thermal phonons by neutral donors in $n$-type indirect-gap semiconductors with zinc-blende structure at low temperatures. The donor electron-phonon scattering relaxation rates are obtained in the presence of internal strains and an external magnetic field for resonance, elastic, and inelastic scattering. These expressions are used in explaining the phonon conductivity of $n$-type AlSb, SiC, ${\mathrm{Mg}}_{2}$Ge, and ${\mathrm{Mg}}_{2}$Si at low temperatures. A good agreement between theory and experiment is obtained.
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