Abstract
The electron-optical-phonon scattering rates in GaAs/AlAs quantum wells (QW) are calculated on the basis of a fully microscopic description of the phonon spectrum. The results indicate the great importance of confined as well as GaAs-like and AlAs-like interface phonons. The implications of these findings are discussed by using the calculated rates in Monte Carlo simulations of ultrafast carrier relaxation in a 50 AA QW.
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