Electron-phonon interaction, dynamical screening and collective excitations in heterostructures: I. Electron-phonon interaction

Abstract

Considering a GaAs-Ga 1− x Al x As heterostructure we investigate the single-particle Hamiltonian of the electron-(long-wave optical) phonon interaction. In detail the dispersion relations of long-wave optical phonons, i.e. of longitudinal optical (LO) phonons and of interface phonons of the polar semiconductor heterostructures are analyzed. The coupling function of the electron-phonon interaction is calculated using a continuum theory. The coupling functions describing the modified Fröhlich interaction of a single electron with the continuous field of polarization of the LO and interface phonons are discussed and presented in graphical form.