Abstract

In this topic review the results of the X-band electron paramagnetic resonance (EPR) measurements of Mn, Co, Cr, Fe ions in YAlO 3 (YAP) crystals and Fe ions in LiNbO 3 (LNO) crystals and of chromium doped Bi 12 GeO 20 (BGO) and Ca 4 GdO(BO 3 ) 3 single crystals, are presented. It is well known that the oxide crystals (for example:YAP, LNO, BGO) are one of the most widely used host materials for different optoelectronic applications. The nature of point defect of impurities and produced in the oxide crystal after irradiation by bismuth ions and after irradiation by the 235 U ions with energy 9.47 MeV/u and fluency 5 × 10 11 cm −1 is discussed. The latter is important for applications of these oxide crystal as laser materials.

Full Text
Published version (Free)

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call