Abstract
AbstractAn acceptor‐related impurity was studied in bulk free standing GaN using electron paramagnetic resonance spectroscopy. Both undoped and Mg‐doped substrates grown by the high nitrogen pressure solution method were examined, but only the doped sample revealed the presence of an EPR‐detected center. Comparison with earlier work on p ‐type GaN films suggests that the defect is an acceptor, heavily compensated during growth. Photo‐EPR studies revealed a photo‐ionization threshold of 2.8 eV, which is interpreted as excitation of an electron from the acceptor to the conduction band. Based on the concentration and photo‐threshold, the EPR center detected in the HNPS doped samples is tentatively identified as Be, which SIMS measurements indicate is a trace impurity in the doped GaN sample. (© 2015 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
