Abstract
Gallium oxide (β-Ga2O3) is a wide-bandgap compound semiconductor with a bandgap of ∼4.9 eV that is currently considered promising for a wide range of applications ranging from transparent conducting electrodes to UV optoelectronic devices and power electronics. However, all of these applications require a reliable and precise control of electrical and optical properties of the material, which can be largely affected by impurities, such as transition metals commonly present during the growth. In this work, we employ electron paramagnetic resonance (EPR) spectroscopy to obtain EPR signatures of the 3d-transition metals Co2+ and Cu2+ in β-Ga2O3 bulk crystals and powders that were unknown so far. Furthermore, we show that both Co2+ and Cu2+ preferentially reside on the octahedral gallium lattice site.
Highlights
Co and Cu, remains unknown so far. This has motivated the present study of transition metals (TMs) signatures in undoped and cobalt doped b-Ga2O3 by employing electron paramagnetic resonance (EPR), as this technique is known to be among the most powerful and versatile experimental methods for nondestructive chemical identification and quantification of defects and impurities
The b-Ga2O3 bulk crystals were grown by the Czochralski method from the melt in an iridium crucible using
The samples were measured in an X-band resonator of a Bruker E500 spectrometer equipped with a He-gas flow cryostat for measurements with adjustable temperatures ranging from 5 K to 300 K in the dark
Summary
Co and Cu, remains unknown so far. This has motivated the present study of TM signatures in undoped and cobalt doped b-Ga2O3 by employing EPR, as this technique is known to be among the most powerful and versatile experimental methods for nondestructive chemical identification and quantification of defects and impurities.17. Germany a)Authors to whom correspondence should be addressed: jan.eric.stehr@liu.se and irina.bouianova@liu.se
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