Abstract
Silicon oxide aerogel samples irradiated with x rays at room temperature have been analyzed using the electron paramagnetic resonance method. It has been found that three types of paramagnetic centers appear: paramagnetic centers with a g factor of 2.0035, centers associated with the presence of protons in SiO2 globules, and centers in the adsorbed film on the aerogel surface. The fast (Tfast = 30 h) and slow (Tslow = 70 d) processes have been revealed in the recombination of these centers.
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