Abstract
Electron paramagnetic resonance (EPR) of centers produced in porous silicon (PS) by heat treatment in vacuum is investigated. Annealing in the temperature range of 400–600 °C and vacuum up to 5×10−5 Torr increases the EPR line intensity of Pb centers in a way depending on the time of annealing. This can be explained by hydrogen depassivation of the Pb centers. An isotropic line with g=2.0055, usually attributed to disordered Si dangling bonds, appears after vacuum annealing of some minutes but at a longer heat treatment its intensity decreases. At room temperature this decrease is exponential with a time constant of a few minutes, depending on the level of vacuum. Heat treatment of PS in vacuum leads to amplification of the Pb EPR spectrum after exposition of samples to air at room temperature.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
