Electron Paramagnetic Resonance in Semiconductors

Abstract

ABSTRACTThe use of electron paramagnetic resonance (EPR) in the study of defects in semiconductors is briefly reviewed, including group IV (C-diamond, Si, Ge, SiC), III-V (AlSb, GaAs, GaSb, GaP, InAs, InP, InSb), II-VI (BaO, BaS, BeO, CaO, CaS, CaSe, CdO, CdS, CdSe, CdTe, MgO, SrO, SrS, ZnO, ZnS, ZnSe, ZnTe) and miscellaneous svstems. The identification of defects via EPR is described as is the exploitation of that identification as a tool in future studies. Particular attention is paid to Si, where is emerging an integrated panorama of identified defects ranging from point defects to aggregates through intermediate defect configurations (as discussed by Tan) to dislocations and stacking faults; EPR results in Si as a testing ground for the theory of shallow donors, in the understanding of diffusion at high temperatures and in the study of heat-treatment defects are discussed as examples of the use of EPR as a tool in defect studies.