Electron Paramagnetic Resonance (EPR) of Phosphorus in Silicon‐Rich Silicon–Germanium Alloys

Abstract

Abstractg‐values, hyperfine splittings, and line widths of the EPR‐spectra of phosphorus substituted into Si1−xGex alloys were investigated at 9.3 GHz and 1.8 K in the range 1 ≧ (1 — x) ≧ 0.84 with phosphorus concentrations between 5 × 1015 and 1019 cm−3. The peculiar variation of the measured quantities with the silicon concentration is discussed with regard to band structure investigations and to the individual surroundings of each phosphorus atom.