Electron Paramagnetic Resonance Characterization of SiC

Abstract

Electron paramagnetic resonance (EPR) spectroscopy is a powerful tool for studying the physical and chemical structure of point defects in crystalline semiconductors. Investigations throughout the past few decades have provided detailed descriptions of some of the most important intrinsic defects and impurities in silicon carbide. Several reviews summarize the significant findings. This chapter expands the scope of earlier work by focusing on EPR studies of as-grown electronic-grade SiC. Both intrinsic and extrinsic defects pertinent to devices are discussed. In particular, impurities used to produce n- and p-type wafers and those incorporated to yield semi-insulating SiC are reviewed. In addition, defects generated by ion implantation are also discussed. To avoid repetition of previously published reviews, the physical description of the defects is only briefly summarized. Rather, this chapter emphasizes the use of collaborative techniques to determine defect energy levels and electrical-passivation mechanisms. Overall, the chapter highlights the contribution of EPR to understanding the electrical, physical, and chemical processes important to technological applications of silicon carbide.