Abstract
Electron paramagnetic resonance (EPR) at T = 4.2 K and photoluminescence (PL) spectra at T = 20 K have been employed to elucidate point defect features in CuGaSe2 crystals grown by the traveling heater method. Isotropic and anisotropic paramagnetic centers have been found in crystals as-grown and annealed in various gas mediums. Three PL bands have been observed and the influence of H2, O2 and Se2 annealing has been studied. The presence of donor singlet VSe+ has been evidenced in as-grown and H2 annealed crystals. Complex study of EPR, PL spectra and defect physics models have allowed the addition of the point defect ensemble in CuGaSe2 with defect pairs (2VCu- + GaCu2+), VCu and other defect complexes, according to treatments used in this work.
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