Abstract
Electron overheating during field emission from carbon island films due to phonon bottleneck effect
Highlights
In our previous works [1,2,3], we observed field electron emission with threshold fields as low as 0.4–1.5 V/μm from island films of graphitic carbon deposited on Si wafers
We have to suggest a model of low-field electron emission relevant to this object
We propose for consideration the following version of hot-electron emission model (Fig. 1)
Summary
In our previous works [1,2,3], we observed field electron emission with threshold fields as low as 0.4–1.5 V/μm from island films of graphitic carbon deposited on Si wafers. The films with the best emission properties were composed of sp2-C islands with lateral size d ≈ 10 nm and height h ≈ 3 nm. The films were deposited on oxidized Si wafers, so that some of the islands had ohmic contact with the substrate while others were separated by Schottky barriers. Work function for the islands was measured by different methods which gave similar values eφ ≈ 4.7 eV. The difference in work function between the islands and the surrounding open substrate areas did not exceed 1 eV. We have to suggest a model of low-field electron emission relevant to this object
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