Abstract
We present a theoretical investigation on wave-vector filtering (WVF) effect for electrons in an antiparallel asymmetric double δ-magnetic-barrier nanostructure, which can be realized experimentally by patterning two asymmetric ferromagnetic (FM) stripes on top and bottom of GaAs/AlxGa1-xAs heterostructure, respectively. It is shown that a considerable WVF effect appears due to an essentially two-dimensional (2D) process for electrons across this nanostructure. It is also shown that WVF efficiency is associated with incident energy, incident direction and structural parameters. In particular, WVF efficiency can be tuned by applying a negative voltage, which maybe results in an electrically-controllable electron-momentum filter for nanoelectronics device applications.
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