Abstract
AbstractThe lateral transport in GaN films produced by electron cyclotron resonance plasma-assisted molecular beam epitaxy (ECR-MBE) doped n-type with Si to the levels of 1015 − 1020 cm−3 was investigated. The room temperature electron mobility vs carrier concentration was found to follow a family of bell-shaped curves consistent with a recently proposed model in which dislocations with an edge component introduce acceptor centers along the dislocation lines which capture electrons from the conduction band in n-type GaN. The mechanism of scattering was investigated by studying the temperature dependence of the carrier concentration and electron mobility. We found that for the samples with high carrier concentration (> 1018cm−3), the scattering at low temperatures is dominated by impurities while for samples with low carrier concentration (<1017 cm−3), the scattering is dominated by charged dislocations.
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