Abstract
Electrical transport in wide band-gap semimagnetic semiconductos is studied by calculating the charge carrier relaxation times due to various scattering mechanisms. Special attention is paid to the spin disorder and alloy scatterings caused by the randomly distributed magnetic ions. The numerical estimations show that in the ferromagnetic case such as Sr1-cEucS the spin disorder scattering may dominate near the magnetic transition temperature even at concentrations C < 1.0. In antiferromagnetic semiconductors such as Cd1-cMncTe the spin disorder scattering seems to be masked by other scattering mechanisms, i.e., alloy scattering, deformation potential scattering and polar optical phonon scattering. The relation of the calculated mobilities to the results of the photomagnetoresistance measurements on Cd1-cMncTe is discussed.
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