Abstract
The low electric field Hall electron mobility has been measured in undoped n-type InSb as a function of temperature and pressure. As long as the semiconductor-insulator transition region is avoided ( P > 7.5 kbar and T < 100 K) the mobility below 50 K appears to be dominated by neutral impurity scattering instead of the expected ionized impurity scattering. The mobility and its pressure derivative agree with the predictions of Ehrenreich for temperatures above 77 K.
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