Abstract
We present a theoretical study of electron mobility in modulation-doped AlSb/InAs quantum wells. The theory also accounts for the nonparabolicity effect. All major scattering mechanisms, including scattering by deformation potential and piezoelectric acoustic phonons, polar optical phonons, ionized impurities, and interface roughness, have been included in our calculations. The low field transport properties of the two dimensional electron gas (2DEG) in the AlSb/InAs quantum wells are studied as a function of temperature, quantum well width, and spacer width and strategies for optimizing the 2DEG mobility are discussed. Depending on the quantum well parameters, the high-mobility limit in this quantum well structure may be determined by either ionized impurity scattering or interface-roughness scattering. The calculated 2DEG mobilities are in very good agreement with the reported experimental data for modulation-doped AlSb/InAs quantum wells.
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