Abstract
The electron mobility in heavily doped GaAs is calculated by using an approach by Yussouf and Zittartz (1973) to account for the electron scattering in a Gaussian random potential. The cases of random and correlated impurity distribution are considered. Comparison with experimental data gives evidence that correlation is essential for the electron transport. It gives rise to a weak dependence of mobility on the electron concentration, which agrees very well with experiment.
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