Abstract
The electron mobility at 77K of heavily doped and compensated gallium arsenide is calculate assuming the predominant scattering comes from a smooth random potential due to a large number of charged impurities with correlated impurity distribution. The nonparabolicity of a conduction band is taken into account at large electron concentrations. A set of samples with given compensation ratios and electron concentrations has been used for experimental verification of the model which explains well the experimental mobilities.
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Schedule a callMore From: Journal of physics. Condensed matter : an Institute of Physics journal
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