Electron mobility in β-Ga2O3: an ensemble Monte Carlo study

Abstract

Numerical simulations are performed to evaluate electron mobility in β-Ga2O3. Following scattering mechanisms were found to be important: acoustic deformation potential, ionized impurity, and polar optical phonons. In β-Ga2O3, a large primitive unit cell (containing ten atoms) leads to multiple phonon modes, which complicate the mobility calculation. Here, by restructuring an in-house ensemble Monte Carlo simulator, we were able to include and examine the effects of all relevant longitudinal optical phonon modes. For low electrical fields at 300 K, we report an electron mobility of 110 cm2/V s. Also, in the range of 150‒500 K, our simulation results match very well with the reported Hall mobility measurement data.